DESCRIPTION

These electrically erasable programmable memory (EEPROM) devices are fabricated with STMicroelectronics’ High Endurance, Double Polysilicon, CMOS technology. This guarantees an endurance typically well above one hundred thousand Erase/Write cycles, with a data retention of 40 years. The memories are organised as 8K x 8 bits and 4K x 8 bits (M95640, M95320) and 2K x 8 bits and 1K x 8 bits (M95160, M95080), and operate down to 2.5 V (for the -W version of each device), and down to 1.8 V (for the -R version of each device).

■ SPI Bus Compatible Serial Interface

■ Supports Positive Clock SPI Modes
■ 5 MHz Clock Rate (maximum)
■ Single Supply Voltage:
– 4.5V to 5.5V for M95xxx
– 2.7V to 5.5V for M95xxx-V
– 2.5V to 5.5V for M95xxx-W
– 1.8V to 3.6V for M95xxx-R
■ Status Register
■ Hardware and Software Protection of the Status Register
■ BYTE and PAGE WRITE (up to 32 Bytes)
■ Self-Timed Programming Cycle
■ Adjustable Size Read-Only EEPROM Area
■ Enhanced ESD Protection
■ 100,000 Erase/Write Cycles (minimum)
■ 40 Year Data Retention (minimum)