DESCRIPTION

The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition.

FEATURES

10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Directly replaces 8k x 8 volatile static RAM or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±10% VCCoperating range (DS1225AD)
Optional ±5% VCC operating range (DS1225AB)
Optional industrial temperature range of -40°C to +85°C, designated IND